View IXFH12N90_220411.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V 900 V
ID25 10 A 12 A 13 A
RDS(on) 1.1 W 0.9 W 0.8 W
trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 10N90 12N90 13N90 10N90 12N90 13N90 10N90 12N90 13N90
Maximum Ratings 900 900 20 30 10 12 13 40 48 13 10 12 13 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A A A A mJ V/ns W C C C C
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
EAR dv/dt PD TJ TJM Tstg TL Md Weight Symbol
TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
D G = Gate, S = Source, D = Drain, TAB = Drain
G
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
l l l l l l
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 900 2.0 V V nA mA mA W W W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 TJ = 25C TJ = 125C
4.5 100 25 1 1.1 0.9 0.8
Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays
l l l l l l l l
10N90 12N90 13N90 Pulse test, t 300 ms, duty cycle d 2 %
Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density
l l l
IXYS reserves the right to change limits, test conditions, and dimensions.
91530G (3/98)
(c) 2000 IXYS All rights reserved
1-4
IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 12 4200 VGS = 0 V, VDS = 25 V, f = 1 MHz 315 90 18 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 W (External) 12 51 18 123 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 27 49 50 50 100 50 155 45 80 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXFH) Outline
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
Source-Drain Diode Symbol IS Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10N90 12N90 13N90 10N90 12N90 13N90 10 12 13 40 48 52 1.5 250 400 1 2 10 15 A A A A A A V ns ns mC mC A A
J K L M N
1.5 2.49
TO-204 AA (IXFM) Outline
ISM
Repetitive; pulse width limited by TJM
VSD t rr QRM IRM
IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C
Dim. A B C D E F G H J K Q R
Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90
Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90
Fig. 1 Output Characteristics
20 18 16 14 12 10 8 6 4 2 0
5V
Fig. 2 Input Admittance
20 18 16
6V
TJ = 25C
VGS = 10V 7V
ID - Amperes
ID - Amperes
14 12 10 8 6 4 2 0
TJ = 25C
0
5
10
15
20
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.5
TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
1.4
RDS(on) - Normalized
RDS(on) - Normalized
2.00 1.75 1.50 1.25 1.00 0.75
ID = 6A
1.3 1.2
VGS = 10V
1.1
VGS = 15V
1.0 0.9 0 5 10 15 20 25
0.50 -50
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
20 18 16
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGS(th)
1.1
BVDSS
BV/VG(th) - Normalized
25 50 75 100 125 150
ID - Amperes
14 12 10 8 6 4 2 0 -50
1.0 0.9 0.8 0.7 0.6
12N90
10N90
-25
0
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90
Fig.7 Gate Charge Characteristic Curve
10 8
VDS = 450V ID = 13A IG = 10mA 10s
Fig.8 Forward Bias Safe Operating Area
6 4 2 0 0 25 50 75 100 125 150
ID - Amperes
10 Limited by RDS(on)
100s 1ms
VGE - Volts
1
10ms 100ms
0.1 1 10 100 1000
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
4500 4000
Ciss
Fig.10Source Current vs. Source to Drain Voltage
18 16 14
Capacitance - pF
3500
f = 1 MHz VDS = 25V
2500 2000 1500 1000 500 0 0 5
Coss Crss
ID - Amperes
3000
12 10 8 6 4 2
TJ = 125C TJ = 25C
10
15
20
25
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VCE - Volts
VSD - Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
4-4

▲Up To Search▲

Price & Availability of IXFH12N90

	To Download IXFH12N90 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .